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IC-Siliziumscheibe
Created with Pixso. SOI Wafer:Lower parasitic capacitance stronger latch-up immunity improved radiation resistance

SOI Wafer:Lower parasitic capacitance stronger latch-up immunity improved radiation resistance

Markenbezeichnung: ZMSH
Modellnummer: Sojawafer
MOQ: 25
Preis: Fluctuates with market
Lieferzeit: 2-4 Wochen
Zahlungsbedingungen: T/T
Einzelheiten
Herkunftsort:
Shanghai, China
Material:
Siliziumdioxid (SiO₂)/Silizium (Si)
Waferdurchmesser:
Maßgeschneidert
Dicke der Geräteschicht:
Maßgeschneidert
BOX-Schichtdicke:
Maßgeschneidert
Kristallorientierung:
<100> / <110> / <111> / Angepasst
Leitfähigkeitsart:
N-Typ / P-Typ / Kundenspezifisch
Produkt-Beschreibung
Product Information SOI (Silicon-on-Insulator) is a “sandwich” structure wafer consisting of three layers: the top silicon layer, also known as the Top Si / Device Layer, is used to fabricate transistors; the middle layer is the Buried Oxide (BOX), which provides electrical isolation; and the bottom layer is the silicon support substrate (Handle/Substrate Wafer). Compared with conventional Bulk Si wafers, SOI wafers feature complete dielectric isolation, enabling lower