6 inch N-type 6H Silicon Carbide Epitaxy Wafer with 350um Thickness for MEMS and UV Sensors

Product description:
 

Our 6H-Polytype N-Type Silicon Carbide Epitaxial Wafer is engineered for high-performance optoelectronics, harsh-environment sensing, and advanced material research. This 6-inch (150mm) substrate features a precision 350 µm thickness, offering superior mechanical stability for complex microfabrication.
While 4H-SiC dominates power electronics, the 6H-polytype excels in UV photodetection, Graphene sublimation growth, and high-temperature MEMS due to its unique 2.96 eV bandgap and emerald-green optical clarity. Each wafer is delivered with an Epi-Ready, mirror-polish finish, ensuring minimal surface roughness for critical CVD processes.
Nitrogen-doped for reliable conductivity, this wafer is the industry standard for researchers and aerospace engineers requiring a chemically inert, radiation-hardened platform. Perfect for next-generation SBDs in specialized sensing or high-index optical applications.
 
 
Features:

1. The 150mm (6-inch) diameter is the current industry standard for transitioning from laboratory research to pilot-scale production. At a precision thickness of 350 μm, these wafers offer the ideal balance between structural rigidity and thermal resistance. This specific thickness is engineered to minimize bow and warp during high-temperature epitaxial growth, ensuring that the wafer remains flat and compatible with automated handling equipment in modern semiconductor fabrication lines.
 
2. Each wafer undergoes advanced Chemical Mechanical Polishing (CMP) to achieve an "Epi-Ready" surface with sub-nanometer roughness. This ultra-smooth starting point is critical for the "step-flow" growth mechanism required in 6H-SiC CVD processes. By eliminating surface scratches and sub-surface damage, this wafer ensures a high-quality crystal interface, which is a mandatory feature for researchers growing epitaxial graphene or developing specialized ultraviolet (UV) photodiodes and solar-blind sensors.
 
3. The 6H polytype features a unique 2.96 eV bandgap, making it naturally transparent and chemically inert. Unlike standard silicon, this material can operate in extreme environments involving high radiation, corrosive chemicals, or temperatures exceeding 500°C. This makes the wafer an essential platform for harsh-environment MEMS and aerospace components. Its nitrogen doping provides consistent N-type conductivity, allowing for reliable ohmic contacts in specialized vertical devices that require high-index optical clarity.
 
Applications:

1. Harsh Environment MEMS. The 6H-SiC N-type wafer is an ideal substrate for Micro-Electromechanical Systems (MEMS) operating in extreme conditions. Its exceptional mechanical hardness and chemical inertness allow for the fabrication of pressure sensors and accelerometers that function reliably at temperatures exceeding 500°C. These radiation-hardened devices are essential for "downhole" oil and gas exploration, as well as real-time monitoring inside aerospace turbine engines.

2. High-Sensitivity UV Sensors. Leveraging its wide 2.96 eV bandgap, this wafer is used to create "solar-blind" ultraviolet (UV) detectors. These sensors are naturally transparent to visible light but highly responsive to UV radiation. This feature is critical for flame detection systems in industrial boilers and missile plume warning receivers, where the device must distinguish high-energy signatures from background sunlight without the need for expensive optical filters.

 
3. Epitaxial Graphene Growth. For the semiconductor research community, 6H-SiC is a premier platform for growing large-area, high-quality graphene via thermal sublimation. When the wafer is heated to extreme temperatures in a controlled vacuum, silicon atoms evaporate from the surface, leaving behind organized carbon layers. The 6H crystal stacking provides a stable, lattice-matched foundation for creating high-speed transistors and next-generation quantum resistance standards.
 
 

Technical Parameters:

Customization:

We provide versatile geometric tailoring. We can adjust wafer thickness and offer various off-cut orientations—ranging from standard 4° tilts to on-axis cuts—to match your epitaxial growth recipe. We also offer different doping options, adjusting resistivity levels to support both N-type conductivity for EV power modules and Semi-Insulating structures for high-frequency RF applications. By fine-tuning our growth cycles, we focus on providing the electrical consistency required for stable, high-performance devices.

FAQs:

Q:Does "Research Grade" (R-Grade) mean the wafer is broken?

A: No. An R-Grade wafer is physically intact and structurally 4H-SiC. However, it typically has a higher micropipe density or slightly more surface "pits" than Prime Grade. While it is not reliable for mass-producing high-voltage commercial chips, it is a cost-effective choice for university testing, polishing trials, or equipment calibration where 100% chip yield is not required.

Q: Why is Silicon Carbide so much more expensive than regular Silicon?

A: It mostly comes down to how hard it is to "grow" and "cut." While Silicon crystals can be grown into huge 12-inch ingots in a couple of days, SiC crystals take nearly two weeks to grow and result in much smaller sizes. Because SiC is almost as hard as diamond, slicing and polishing it requires specialized, expensive diamond-tipped tools and high-pressure processes. You are paying for a material that survives much higher heat and voltage than regular Silicon can handle.

Q: Do I need to polish the wafers again before using them?

A: No, if you order "epi-ready" wafers. These have already undergone chemical mechanical polishing, meaning the surface is atomically smooth and ready for your next production step. If you buy MP or "Dummy" wafers, they will have microscopic scratches and will require further professional polishing before you can build any working chips on them.

Related product:

SIlicon Carbide Wafer 4inch dia x 350um 4H-N type P/R/D grade MOSEFTs/SBD/JBS